• Home Systems & Design Low Power - High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Special Reports Business & Startups Jobs Knowledge Center Technical PapersHome’;AI/ML/DLArchitecturesAutomotive/ AerospaceCommunication/Data MovementDesign & VerificationLithographyManufacturingMaterialsMemoryOptoelectronics / PhotonicsPackagingPower & PerformanceQuantumSecurityTest, Measurement, Analytics tech papersTransistorsZ-End Applications Home AI/ML/DL Architectures Automotive/ Aerospace Communication/Data Movement Design & Verification Lithography Manufacturing Materials Memory Optoelectronics / Photonics Packaging Power & Performance Quantum Security Test, Measurement, Analytics tech papers Transistors Z-End Applications Events & WebinarsEventsWebinars Events Webinars Videos & ResearchVideosIndustry Research Videos Industry Research Newsletters & StoreNewslettersStore Newsletters Store MENUHomeSpecial ReportsSystems & DesignLow Power-High PerformanceManufacturing, Packaging & MaterialsTest, Measurement & AnalyticsAuto, Security & Enabling TechnologiesKnowledge CenterVideosStartup CornerBusiness & StartupsJobsTechnical PapersEventsWebinarsIndustry ResearchNewslettersStoreSpecial Reports Home Special Reports Systems & Design Low Power-High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Knowledge Center Videos Startup Corner Business & Startups Jobs Technical Papers Events Webinars Industry Research Newsletters Store Special Reports Ultrafast Laser Filamentation Dictates Energy Deposition in Narrow-Gap Semiconductors A new technical paper, “Extreme optical nonlinearities unveiled by ultrafast laser filamentation in semiconductors,” was published by researchers at Abbe Center of Photonics, Laboratoire Hubert Curien et al. • Abstract “Sky-high optical nonlinearities make semiconductors ideal platforms for multifunctional photonic devices.

Article Summaries:

  • A 2026 study from the Abbe Center of Photonics and collaborators reports that ultrafast laser filamentation governs how high‑intensity, sub‑picosecond pulses propagate in narrow‑gap semiconductors such as silicon. By measuring the nonlinear response during filamentation, the authors extracted key parameters that differ markedly from values obtained with low‑intensity experiments. They also derived temporal scaling laws for these parameters and proposed pulse shaping strategies to control energy deposition inside the crystal. The results provide predictive inputs for applications ranging from backside semiconductor processing and microelectronics security to high‑harmonic, supercontinuum, and terahertz generation. The paper is published in Nature Communications (2026).
  • A recent study from the Abbe Center of Photonics and Laboratoire Hubert Curien reports that ultrafast laser filamentation governs how high‑intensity, short‑pulse lasers propagate through narrow‑gap semiconductors such as silicon. The team measured key nonlinear parameters-different from those obtained with low‑intensity light-and derived temporal scaling laws for these effects. Their findings show that the material’s intrinsic nonlinearities act as a self‑protective mechanism, preventing permanent damage while enabling precise energy deposition. The authors propose tailored temporal‑spectral shaping to control energy delivery, offering new predictive tools for semiconductor backside processing, microelectronics security, and the generation of high‑harmonic, supercontinuum, and terahertz radiation.

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