• Samsung has begun mass production and commercial shipments of its HBM4 DRAM, marking what it describes as an industry first. • Built on Samsung’s 6th-generation 10-nm-class DRAM process with a 4-nm logic base die, this high-bandwidth memory is optimized for performance, reliability, and energy efficiency in AI, HPC, and datacenter applications. • Samsung’s HBM4 delivers a consistent transfer speed of 11.7 Gbps - roughly 46% faster than the 8-Gbps industry standard and a 1.22× improvement over the 9.6-Gbps maximum of HBM3E. • Memory bandwidth per single stack reaches up to 3.3 TB/s, a 2.7× increase over HBM3E. • Current 12-layer stacking enables capacities from 24 GB to 36 GB, with future 16-layer stacks projected to expand offerings up to 48 GB. • To handle the doubled data I/Os from 1024 to 2048 pins, advanced low-power techniques were applied to the core die.

Article Summaries:

  • Samsung has begun mass production and commercial shipments of its HBM4 DRAM, marking what it describes as an industry first. Built on Samsung’s 6th-generation 10-nm-class DRAM process with a 4-nm logic base die, this high-bandwidth memory is optimized for performance, reliability, and energy efficiency in AI, HPC, and datacenter applications. Samsung’s HBM4 delivers a consistent transfer speed of 11.7 Gbps - roughly 46% faster than the 8-Gbps industry standard and a 1.22× improvement over the 9.6-Gbps maximum of HBM3E. Memory bandwidth per single stack reaches up to 3.3 TB/s, a 2.7× increase o

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