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Article Summaries:
- A recent study from RWTH Aachen and Forschungszentrum Jülich reports the first integration of nanoscale molybdenum disulfide (MoS₂) memristors onto commercial CMOS chips. The team fabricated 1 T 1 R cells with an active area of ~0.015 µm² in the back‑end‑of‑line of 350 nm technology. The MoS₂‑based resistive‑switching devices exhibit forming‑free, non‑volatile operation at ultra‑low voltages (≈0.23 V for SET, ≈-0.1 V for RESET) and a cycle‑to‑cycle variability of only 6.7 %. Across 19 devices, the current‑voltage characteristics show high repeatability, indicating a viable path toward low‑power neuromorphic and memory applications on silicon.
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