• Home Systems & Design Low Power - High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Special Reports Business & Startups Jobs Knowledge Center Technical PapersHome’;AI/ML/DLArchitecturesAutomotive/ AerospaceCommunication/Data MovementDesign & VerificationLithographyManufacturingMaterialsMemoryOptoelectronics / PhotonicsPackagingPower & PerformanceQuantumSecurityTest, Measurement, Analytics tech papersTransistorsZ-End Applications Home AI/ML/DL Architectures Automotive/ Aerospace Communication/Data Movement Design & Verification Lithography Manufacturing Materials Memory Optoelectronics / Photonics Packaging Power & Performance Quantum Security Test, Measurement, Analytics tech papers Transistors Z-End Applications Events & WebinarsEventsWebinars Events Webinars Videos & ResearchVideosIndustry Research Videos Industry Research Newsletters & StoreNewslettersStore Newsletters Store MENUHomeSpecial ReportsSystems & DesignLow Power-High PerformanceManufacturing, Packaging & MaterialsTest, Measurement & AnalyticsAuto, Security & Enabling TechnologiesKnowledge CenterVideosStartup CornerBusiness & StartupsJobsTechnical PapersEventsWebinarsIndustry ResearchNewslettersStoreSpecial Reports Home Special Reports Systems & Design Low Power-High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Knowledge Center Videos Startup Corner Business & Startups Jobs Technical Papers Events Webinars Industry Research Newsletters Store Special Reports 3D Atomic-Scale Metrology of Strain Relaxation And Roughness in GAAFETs Via Electron Ptychography (Cornell, ASM, TSMC) A new technical paper, “3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography,” was published by researchers at Cornell University, ASM and TSMC. • Abstract “Next-generation semiconductor devices are adopting three-dimensional (3

Article Summaries:

  • A recent study from Cornell University, ASM, and TSMC demonstrates that multislice electron ptychography can deliver three‑dimensional, sub‑Ångström imaging of gate‑all‑around transistors (GAA‑FETs). The technique provides nanometer‑scale depth resolution, enabling direct measurement of interface roughness, strain, and defects in the 5‑nm‑thick silicon channel. The authors found that only about 60 % of the channel atoms retain a bulk‑like structure, with the remainder relaxing away from the oxide interfaces. This quantitative, atomic‑scale metrology-previously attainable only through indirect inference-offers critical data for device modeling and process optimization.
  • A joint study by Cornell University, ASM, and TSMC has demonstrated a new 3‑D metrology technique for gate‑all‑around transistors (GAA‑FETs) using multislice electron ptychography. The method delivers sub‑Ångström lateral resolution and nanometer‑scale depth sensitivity, enabling direct imaging of buried device layers. In prototype 5‑nm‑thick silicon channels, the authors quantified interface roughness, strain, and defect distributions, revealing that only about 60 % of silicon atoms retain a bulk‑like structure due to strain relaxation away from the oxide interfaces. The technique provides quantitative, atomic‑scale data that were previously inferred indirectly, offering critical parameters for device modeling and process optimization.

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