• Subjects Electronic devices Electronic properties and materials A charge transfer between metal oxide and halide perovskites occurring beneath the metal contact surface locally dopes the semiconductor, dramatically reducing contact resistance and enabling efficient low-voltage charge injection. • This is a preview of subscription content,access via your institution Access options Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription 27,99 €/ 30 days cancel any time Subscribe to this journal Receive 12 print issues and online access 251,40 € per year only 20,95 € per issue Rent or buy this article Prices vary by article type from$1.95 to$39.95 Prices may be subject to local taxes which are calculated during checkout References Dennard, R. • Solid State Circuits9, 256-268 (1974).ArticleGoogle Scholar Dennard, R. • Solid State Circuits9, 256-268 (1974). • ArticleGoogle Scholar Xu, Y. • Mater.30, 1801830 (2018).ArticleGoogle Scholar Xu, Y.

Article Summaries:

  • Researchers have shown that a charge transfer occurring beneath metal‑oxide contacts can locally dope halide perovskite semiconductors, dramatically lowering contact resistance. This ultralow resistance enables efficient low‑voltage charge injection, a key bottleneck in perovskite‑based devices such as solar cells and light‑emitting diodes. By engineering the metal‑oxide/perovskite interface, the study demonstrates a practical route to improve device performance and stability without altering the bulk material. The findings suggest that interface‑driven doping could become a standard strategy for optimizing perovskite electronics and expanding their commercial viability.

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