• Abstract Chiral antiferromagnets1,2 host octupole order3,4 and combine the advantages of antiferromagnets and ferromagnets • Despite the development of numerous switching strategies5,6,7,8,9, the field-free full switching remains unknown, posing an important obstacle to their practical application in memory technology • Here we prepared a homo-junction constituted of Mn3Sn(0001) bottom layer and polycrystalline Mn3Sn top layer • The tilted Kagomé geometry in polycrystalline Mn3Sn divides the out-of-plane spin polarization from Mn3Sn(0001) layer10,11 into the out-of-Kagomé-plane and in-Kagomé-plane components, generating the symmetric (antiferromagnet-type) and asymmetric (ferromagnet-type) driving forces, respectively • The former accelerates octupole rotation, whereas the latter determines switching chirality • Field-free full switching is realized in the unconventional protocol that integrates the advantages of both antiferromagnetic and ferromagnetic switching

Article Summaries:

  • Abstract Chiral antiferromagnets1,2 host octupole order3,4 and combine the advantages of antiferromagnets and ferromagnets. Despite the development of numerous switching strategies5,6,7,8,9, the field-free full switching remains unknown, posing an important obstacle to their practical application in memory technology. Here we prepared a homo-junction constituted of Mn3Sn(0001) bottom layer and polycrystalline Mn3Sn top layer. The tilted Kagomé geometry in polycrystalline Mn3Sn divides the out-of-plane spin polarization from Mn3Sn(0001) layer10,11 into the out-of-Kagomé-plane and in-Kagomé-plan

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