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Article Summaries:
- Researchers from Univ Rennes, CNRS, and IETR have published a new technical paper detailing an electrical model that simulates bitflips in SRAM cells caused by laser fault injection. The model centers on a bipolar phototransistor that amplifies photocurrent generated by a photodiode connected to the collector/drain and base/bulk of the transistor. This configuration reproduces the Off/On switching of MOSFETs in a CMOS inverter, and the authors demonstrate its effectiveness first on a single inverter and then on a full SRAM cell. The study, appearing in Microelectronics Reliability (2026), provides a framework for predicting laser‑induced memory errors.
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