• Home Systems & Design Low Power - High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Special Reports Business & Startups Jobs Knowledge Center Technical PapersHome’;AI/ML/DLArchitecturesAutomotive/ AerospaceCommunication/Data MovementDesign & VerificationLithographyManufacturingMaterialsMemoryOptoelectronics / PhotonicsPackagingPower & PerformanceQuantumSecurityTest, Measurement, Analytics tech papersTransistorsZ-End Applications Home AI/ML/DL Architectures Automotive/ Aerospace Communication/Data Movement Design & Verification Lithography Manufacturing Materials Memory Optoelectronics / Photonics Packaging Power & Performance Quantum Security Test, Measurement, Analytics tech papers Transistors Z-End Applications Events & WebinarsEventsWebinars Events Webinars Videos & ResearchVideosIndustry Research Videos Industry Research Newsletters & StoreNewslettersStore Newsletters Store MENUHomeSpecial ReportsSystems & DesignLow Power-High PerformanceManufacturing, Packaging & MaterialsTest, Measurement & AnalyticsAuto, Security & Enabling TechnologiesKnowledge CenterVideosStartup CornerBusiness & StartupsJobsTechnical PapersEventsWebinarsIndustry ResearchNewslettersStoreSpecial Reports Home Special Reports Systems & Design Low Power-High Performance Manufacturing, Packaging & Materials Test, Measurement & Analytics Auto, Security & Enabling Technologies Knowledge Center Videos Startup Corner Business & Startups Jobs Technical Papers Events Webinars Industry Research Newsletters Store Special Reports Carrier Mapping in Sub-2nm Node NSFETs with SSRM (imec, KU Leuven) Researchers fromimecandKU Leuvenpublished “Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy.” Abstract “As the semiconductor industry transitions to gate-all-around architectures such as Nanosheet-FETs (NSFETs) for the 2nm node and beyond, controlling parasitic resistance through precise jun

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  • Researchers from imec and KU Leuven published “Carrier Mapping in Sub-2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy.” Abstract “As the semiconductor industry transitions to gate-all-around architectures such as Nanosheet-FETs (NSFETs) for the 2nm node and beyond, controlling parasitic resistance through precise junction engineering is fundamental. This requires characterization methods capable of mapping active carriers with nanometer-scale resolution. This work demonstrates a significant advancement in scanning spreading resistance microscopy (SSRM) that enables

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