• Samsung Ships Industry-First Commercial HBM4 With Ultimate Performance for AI Computing Korea on February 12, 2026 AUDIO Play Download Share open Print Mass production commences for HBM4 with consistent transfer speed of 11.7Gbps, capable of up to 13GbpsLeading-edge DRAM with 4nm logic base die maximizes performance, reliability and energy efficiency for next-generation datacentersSecure process technology and supply capabilities strengthen Samsung’s HBM roadmap beyond HBM4 Samsung Electronics, a global leader in advanced memory technology, today announced that it has begun mass production of its industry-leading HBM4 and has shipped commercial products to customers. • This achievement marks a first in the industry, securing an early leadership position in the HBM4 market. • By proactively leveraging its most advanced 6th-generation 10 nanometer (nm)-class DRAM process (1c), the company achieved stable yields and industry-leading performance from the outset of mass production - all accomplished seamlessly and without any additional redesigns. • “Instead of taking the conventional path of utilizing existing proven designs, Samsung took the leap and adopted the most advanced nodes like the 1c DRAM and 4nm logic process for HBM4,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. • “By leveraging our process competitiveness and design optimization, we are able to secure substantial performance headroom, enabling us to satisfy our customers’ escalating demands for higher performance, when they need them.” Setting the Bar for Maximum Performance and Efficiency Samsung’s HBM4 delivers a consistent processing speed of 11.7 gigabits-per-second (Gbps), exceeding the industry standard of 8Gbps by approximately 46% and setting a new benchmark for HBM4 performance. • This represents a 1.22x increase over the maximum pin speed of 9.6Gbps of its predecessor, HBM3E.

Article Summaries:

  • Samsung Electronics has begun mass production and commercial shipment of its first industry‑first HBM4 memory, targeting AI and high‑performance computing workloads. The new HBM4 delivers a consistent 11.7 Gbps transfer rate-about 46 % faster than the industry standard-and can reach 13 Gbps, boosting total bandwidth to 3.3 TB/s per stack. Built on a 4 nm logic base die and Samsung’s 10 nm DRAM process, the 12‑layer stacks offer 24-36 GB, with 16‑layer options up to 48 GB. Samsung reports a 40 % power‑efficiency gain, 10 % better thermal resistance, and 30 % improved heat dissipation, positioning the product as a high‑performance, energy‑efficient solution for next‑generation data centers.

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