• Learn how scaling beyond Dennard’s limits triggered short-channel effects (SCE) and why transitioning from FinFET to Gate-All-Around (GAA) architectures is vital for 2 nm control.
Article Summaries:
- Scaling beyond Dennard’s limits has intensified short‑channel effects (SCE), undermining transistor performance as device dimensions shrink. FinFET technology, with its three‑dimensional gate structure, has mitigated SCE to a degree, but its effectiveness diminishes at the 2 nm node. The industry is therefore shifting toward Gate‑All‑Around (GAA) architectures, which envelop the channel entirely, offering superior electrostatic control and reduced leakage. This transition is essential for maintaining drive current and power efficiency in next‑generation nanoscale devices, ensuring continued performance gains while addressing the escalating challenges of extreme scaling.
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